PART |
Description |
Maker |
A120212 |
The Allegro A1202 and A1203 Hall-effect bipolar switches are next-generation replacements and extension of the popular Allegro A3133 and A3132 bipolar switch product line.
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Allegro MicroSystems
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BFS17W BFS17W. |
RF-Bipolar - For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA RF-Bipolar NPN Type Transistors with transition frequency from 1 to 6 GHz NPN Silicon RF Transistor
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INFINEON[Infineon Technologies AG]
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ZTX601A ZTX600Z ZTX600AZ ZTX600BZ ZTX601B |
Discrete - Bipolar Transistors - Darlington Transistors - ZTX600B(Z) Discrete - Bipolar Transistors - Darlington Transistors - ZTX600A(Z) Discrete - Bipolar Transistors - Darlington Transistors - ZTX600(Z) NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
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Diodes List of Unclassifed Manufacturers
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BUX13 |
5V, 500mA low drop voltage regulator Bipolar NPN Device in a Bipolar NPN Device in a Metal Package
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Seme LAB
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MAX1156-MAX1174 MAX1174ACUP MAX1174AEUP MAX1174BCU |
14-Bit 135ksps Single-Supply ADCs with Bipolar Analog Input Range 14-Bit / 135ksps / Single-Supply ADCs with Bipolar Analog Input Range "14-Bit, 135ksps, Single-Supply ADCs with Bipolar Analog Input Range" 1300/8000 Series Lucent STII Fiber Die 14-Bit, 135ksps, Single-Supply ADCs with Bipolar Analog Input Range 1-CH 14-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, PDSO20 14-Bit.135ksps.Single-Supply ADCs with Bipolar Analog Input Range
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MAXIM - Dallas Semiconductor MAXIM[Maxim Integrated Products] Maxim Integrated Products, Inc.
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TC2015 TC2014 |
The TC2014, TC2015, and TC2185 are high accuracy (typically ±0.4%) CMOS upgrades for older (bipolar) low dropout regulators such as the LP2980. Total supply current is typically 55A (20 to 60 times lower than in bipolar regulators!).
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Microchip
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IRG4PC50S IRG4PC50SPBF |
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TANSISTOR(Vces=600V, Vce(on)typ.=1.28V, @Vge=15V, Ic=41A) INSULATED GATE BIPOLAR TRANSISTOR
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IRF[International Rectifier]
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2SC4800 2SC4801 2SC4802 2SC4803 2SC2820 2SD476 2SD |
Power Bipolar Transistors 功率双极晶体 (2SC4800 - 2SC4803) Power Bipolar Transistors
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List of Unclassifed Manufac... http:// Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers N.A. Toshiba Semiconductor ETC[ETC] List of Unclassifed Man...
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AM27S29 AM27S29ADC AM27S29AJC AM27S29A AM27S29SA A |
4096 Bit Bipolar PROM 4,096-Bit (512x8) Bipolar PROM
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http:// AMD[Advanced Micro Devices]
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CPH6223-TL-E |
Bipolar Transistor Bipolar Transistor (.)50V, (.)3A, Low VCE(sat), (PNP)NPN Single CPH6
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ON Semiconductor
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30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
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MDE Semiconductor
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IRG4BC29K IRG4BC30K IRG4BC30 |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
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IRF[International Rectifier]
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